LED Lift-Off (LLO)
JPSA performs LED lift-off operations for the compound semiconductor and wafer fab industries using the IX-260 ChromAblate™ UV laser workstation. A major cost of LED fabrication is the sapphire and the scribe-and-break operation. LED lift-off dramatically reduces the time and cost of the LED fabrication process.
LED lift-off promises to eliminate wafer scribing by enabling the manufacturer to grow GaN LED film devices on the sapphire wafer, for example, and then transfer the thin film device to a heat sink electrical interconnect. The IX-1000 ChromaLift™ homogenizes the laser beam profile and fires through the back of a sapphire wafer to debond the GaN LED device and transfer it to a substrate where it can then be packaged onto a heat sink or optical reflector.
An example of UV laser delamination of GaN film from a sapphire substrate. A large field of view permits homogenous illumination of multiple sites.
News and Events
JPSA Laser provides excimer and Diode Pumped Solid State (DPSS) laser micromachining solutions for:
- Thin film PV patterning
- Laser scribing
- LED Lift-Off (LLO)
- Laser dicing
- Silicon edge isolation
- Ink-jet nozzles
- Microfluidic devices
- Micro vias
- Annealing and doping
- Parylene ablation
- Concentrator photovoltaics
See JPSA at:
EU PVSEC
Feria Valencia, Spain
Septemeber 6-9
Booth L3/H4/A29
