LED Lift-Off (LLO)
JPSA performs LED lift-off operations for the compound semiconductor and wafer fab industries using the IX-260 ChromAblate™ UV laser workstation. A major cost of LED fabrication is the sapphire and the scribe-and-break operation. LED lift-off dramatically reduces the time and cost of the LED fabrication process.
LED lift-off promises to eliminate wafer scribing by enabling the manufacturer to grow GaN LED film devices on the sapphire wafer, for example, and then transfer the thin film device to a heat sink electrical interconnect. The IX-1000 ChromaLift™ homogenizes the laser beam profile and fires through the back of a sapphire wafer to debond the GaN LED device and transfer it to a substrate where it can then be packaged onto a heat sink or optical reflector.
An example of UV laser delamination of GaN film from a sapphire substrate. A large field of view permits homogenous illumination of multiple sites.
Laser Micromachining
JPSA Laser provides excimer, Diode Pumped Solid State (DPSS), and Ultrafast laser micromachining solutions for:
- Thin Film PV Patterning
- Laser Scribing
- LED Lift-Off (LLO)
- Advanced Laser Lift-Off
- Metal Dicing
- Laser Dicing
- Via Drilling
- Silicon Edge Isolation
- Ink-Jet Nozzles
- Microfluidic Devices
- Micro Vias
- Annealing and Doping
- Parylene Ablation
- 3D Micro Features
- Concentrator Photovoltaics