LED Primer
Physics
An LED consists of a semiconducting material that has been doped to create a p-n junction. Charge-carriers—electrons and holes—flow into the junction from electrodes with different voltages. When an electron meets a hole, it falls into a lower energy level, and releases energy in the form of a photon.
The wavelength of the light emitted, and therefore its color, depends on the band gap energy of the materials forming the p-n junction. The materials used for the LED have a direct band gap with energies corresponding to near-infrared, visible or near-ultraviolet light. LED development began with infrared and red devices made with gallium arsenide. Advances in materials science have made possible the production of devices with ever-shorter wavelengths, producing light in a variety of colors.
LEDs are usually built on an n-type substrate, with an electrode attached to the p-type layer deposited on its surface. P-type substrates, while less common, occur as well. Many commercial LEDs, especially GaN/InGaN, also use sapphire substrate.
Most materials used for LED production have very high refractive indices. This means that much light will be reflected back in to the material at the material/air surface interface. Therefore Light extraction in LEDs is an important aspect of LED production, subject to much research and development.
Light Extraction
Light extraction in LEDs involves the set of particular problems that is connected with getting light from the light emitting p-n junction in a LED to the surroundings, such that the light might be useful, for instance for lighting.
The refractive index of most LED semiconductor materials is quite high, so in almost all cases the light from the LED is coupled into a much lower-index medium. The large index difference makes the reflection quite substantial (per the Fresnel coefficients). The produced light gets partially reflected back into the semiconductor, where it may be absorbed and turned into additional heat; this is usually one of the dominant causes of LED inefficiency. Often more than half of the emitted light is reflected back at the LED-package and package-air interfaces.
The reflection is most commonly reduced by using a dome-shaped (half-sphere) package with the diode in the center so that the outgoing light rays strike the surface perpendicularly, at which angle the reflection is minimized. Substrates that are transparent to the emitted wavelength, and backed by a reflective layer, increase the LED efficiency. The refractive index of the package material should also match the index of the semiconductor, to minimize back-reflection. An anti-reflection coating may be added as well.
The package may be colored, but this is only for cosmetic reasons or to improve the contrast ratio; the color of the packaging does not substantially affect the color of the light emitted.
Other strategies for reducing the impact of the interface reflections include designing the LED to reabsorb and reemit the reflected light (called photon recycling) and manipulating the microscopic structure of the surface to reduce the reflectance, by introducing random roughness, creating programmed moth eye surface patterns. Recently photonic crystals have also been used to minimize back-reflections. In December 2007, scientists at Glasgow University claimed to have found a way to make LEDs more energy efficient, imprinting billions of holes into LEDs using a process known as nanoimprint lithography.
Color |
Wavelength [nm] |
Voltage [V] |
Semiconductor Material |
|
Infrared |
λ > 760 |
ΔV < 1.9 |
Gallium arsenide (GaAs) |
|
Red |
610 < λ < 760 |
1.63 < ΔV < 2.03 |
Aluminium gallium arsenide (AlGaAs) |
|
Orange |
590 < λ < 610 |
2.03 < ΔV < 2.10 |
Gallium arsenide phosphide (GaAsP) |
|
Yellow |
570 < λ < 590 |
2.10 < ΔV < 2.18 |
Gallium arsenide phosphide (GaAsP) |
|
Green |
500 < λ < 570 |
2.18 < ΔV < 4.0 |
Indium gallium nitride (InGaN) / Gallium(III) nitride (GaN) |
|
Blue |
450 < λ < 500 |
2.48 < ΔV < 3.7 |
Zinc selenide (ZnSe) |
|
Violet |
400 < λ < 450 |
2.76 < ΔV < 4.0 |
Indium gallium nitride (InGaN) |
|
Purple |
multiple types |
2.48 < ΔV < 3.7 |
Dual blue/red LEDs, |
|
Ultraviolet |
λ < 400 |
3.1 < ΔV < 4.4 |
diamond (C) |
|
White |
Broad spectrum |
ΔV = 3.5 |
Blue/UV diode with yellow phosphor |
Ultraviolet and blue LEDs
Blue LEDs are based on the wide band gap semiconductors GaN (gallium nitride) and InGaN (indium gallium nitride). They can be added to existing red and green LEDs to produce the impression of white light, though white LEDs today rarely use this principle.
By the late 1990s, blue LEDs had become widely available. They have an active region consisting of one or more InGaN quantum wells sandwiched between thicker layers of GaN, called cladding layers. By varying the relative InN-GaN fraction in the InGaN quantum wells, the light emission can be varied from violet to amber. AlGaN aluminium gallium nitride of varying AlN fraction can be used to manufacture the cladding and quantum well layers for ultraviolet LEDs, but these devices have not yet reached the level of efficiency and technological maturity of the InGaN-GaN blue/green devices. If the active quantum well layers are GaN, as opposed to alloyed InGaN or AlGaN, the device will emit near-ultraviolet light with wavelengths around 350–370 nm. Green LEDs manufactured from the InGaN-GaN system are far more efficient and brighter than green LEDs produced with non-nitride material systems.
With nitrides containing aluminium, most often AlGaN and AlGaInN, even shorter wavelengths are achievable. Ultraviolet LEDs in a range of wavelengths are becoming available on the market. Near-UV emitters at wavelengths around 375–395 nm are already cheap and often encountered, for example, as black light lamp replacements for inspection of anti-counterfeiting UV watermarks in some documents and paper currencies. Shorter wavelength diodes, while substantially more expensive, are commercially available for wavelengths down to 247 nm. As the photosensitivity of microorganisms approximately matches the absorption spectrum of DNA, with a peak at about 260 nm, UV LEDs emitting at 250–270 nm are to be expected in prospective disinfection and sterilization devices. Recent research has shown that commercially available UVA LEDs (365 nm) are already effective disinfection and sterilization devices.
Wavelengths down to 210 nm were obtained in laboratories using aluminium nitride.
White light
This method involves coating an LED of one color (mostly blue LED made of InGaN) with phosphor of different colors to produce white light, the resultant LEDs are called phosphor based white LEDs. A fraction of the blue light undergoes the Stokes shift being transformed from shorter wavelengths to longer. Depending on the color of the original LED, phosphors of different colors can be employed. If several phosphor layers of distinct colors are applied, the emitted spectrum is broadened, effectively increasing the color rendering index (CRI) value of a given LED.
Phosphor based LEDs have a lower efficiency than normal LEDs due to the heat loss from the Stokes shift and also other phosphor-related degradation issues. However, the phosphor method is still the most popular technique for manufacturing high intensity white LEDs. The design and production of a light source or light fixture using a monochrome emitter with phosphor conversion is simpler and cheaper than a complex RGB system, and the majority of high intensity white LEDs presently on the market are manufactured using phosphor light conversion.
The greatest barrier to high efficiency is the seemingly unavoidable Stokes energy loss. However, much effort is being spent on optimizing these devices to higher light output and higher operation temperatures. For instance, the efficiency can be increased by adapting better package design or by using a more suitable type of phosphor. Philips Lumileds' patented conformal coating process addresses the issue of varying phosphor thickness, giving the white LEDs a more homogeneous white light. With development ongoing, the efficiency of phosphor based LEDs is generally increased with every new product announcement.
Technically the phosphor based white LEDs encapsulate InGaN blue LEDs inside of a phosphor coated epoxy. A common yellow phosphor material is cerium-doped yttrium aluminium garnet (Ce3+:YAG).
Excerpts provided by Wikipedia
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