Laser Systems for Micromachining
Material |
Symbol |
Band gap (eV) |
Lead(II) selenide |
PbSe |
0.27 |
Lead(II) telluride |
PbTe |
0.29 |
Indium(III) arsenide |
InAs |
0.36 |
Lead(II) sulfide |
PbS |
0.37 |
Germanium |
Ge |
0.67 |
Gallium antimonide |
GaSb |
0.7 |
Indium(III) nitride |
InN |
0.7 |
Silicon |
Si |
1.11 |
Copper(II) oxide |
CuO |
1.2 |
Indium(III) phosphide |
InP |
1.35 |
Gallium(III) arsenide |
GaAs |
1.43 |
Cadmium telluride |
CdTe |
1.49 |
Aluminium antimonide |
AlSb |
1.6 |
Cadmium selenide |
CdSe |
1.73 |
Selenium |
Se |
1.74 |
Aluminium arsenide |
AlAs |
2.16 |
Zinc telluride |
ZnTe |
2.25 |
Gallium(III) phosphide |
GaP |
2.26 |
Cadmium sulfide |
CdS |
2.42 |
Aluminum phosphide |
AlP |
2.45 |
Gallium(II) sulfide |
GaS |
2.5 |
Zinc selenide |
ZnSe |
2.7 |
Silicon carbide |
SiC |
2.86 |
Zinc oxide |
ZnO |
3.37 |
Gallium(III) nitride |
GaN |
3.4 |
Zinc sulfide |
ZnS |
3.6 |
Diamond |
C |
5.5 |
Aluminium nitride |
AlN |
6.3 |
News and Events
JPSA Laser provides excimer and Diode Pumped Solid State (DPSS) laser micromachining solutions for:
- Thin film PV patterning
- Laser scribing
- LED Lift-Off (LLO)
- Laser dicing
- Silicon edge isolation
- Ink-jet nozzles
- Microfluidic devices
- Micro vias
- Annealing and doping
- Parylene ablation
- Concentrator photovoltaics